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TR-PROBE THz-Raman™ Probe

Model:TR-PROBE
TR-PROBE THz-Raman™ Probe
TR-PROBE THz-Raman™ Probe
TR-PROBE THz-Raman™ Probe
TR-PROBE THz-Raman™ Probe

Overview

TR-PROBE THz-Raman™ Probe extends Raman into the THz/low-frequency domain (down to ~10cm⁻¹) with ultra-narrowband notch and ASE clean-up filters. Single wavelength 532/785/830nm or dual 830+638nm excitation, simultaneous Stokes & Anti-Stokes, with interchangeable sampling accessories for real-time in-situ analysis without sample preparation.

Description

Overview

TR-PROBE THz-Raman™ Spectroscopy Systems expand traditional Raman spectroscopy into the Terahertz/low-frequency domain, capturing the same range of energy transitions as terahertz spectroscopy while retaining the ability to measure the Raman "chemical fingerprint" region. With ultra-narrowband notch and ASE clean-up filters, built-in thermal compensation, and a variety of sample accessories, these systems offer robust and stable performance with no special sample preparation, enabling real-time, in-situ analysis of material processes.

Features

  • THz/low-frequency measurement down to ~10cm⁻¹; spectral range -770~+3120cm⁻¹ (785nm)
  • Simultaneous Stokes and anti-Stokes signals - improved SNR with inherent calibration reference
  • Excitation wavelengths 532/785/830nm single or 830+638nm dual; up to 300mW
  • Dual-polarization variant for simultaneous measurement in both polarizations
  • Fiber coupled output for interfacing with a wide range of spectrometers
  • Interchangeable sample accessories: TR-ACC-SPEC, TR-ACC-PRTIP, TR-ACC-MICRO, TR-ACC-VIALKIT, TR-WP
  • No special sample preparation needed; real-time in-situ analysis

Key Applications

  • Process monitoring of phase transformations and solid-state chemistry
  • In-line crystallinity monitoring for amorphous solid dispersions (ASD)
  • Polymorphism differentiation and salt screening
  • Crystallinity meter - monitoring and quantifying degree of crystallinity
  • Co-crystal formation characterization
  • Nanomaterials - thickness and orientation of 2D materials (TMDs)
  • Structural characterization of polymers

【Contact】

17317958112

Specifications

Excitation WavelengthSingle: 532 / 785 / 830nm; Dual: 830+638nm
Power at Sample Port75mW (532 single-mode); 50mW (830 single-mode); 300mW (multi-mode); 100mW (638 multi-mode)+300mW (830 multi-mode, dual)
Spectral Range (785nm)740~1040nm; -770~+3120cm⁻¹
Spectral Range (830nm)-1460~+2430cm⁻¹
Stray Light (Monochromatic Input)<0.03% (at ±40nm from peak)
Weight1.6kg (TR-PROBE); 3.5kg (CleanLine); 6.9kg (Spectrograph)
Dimensions (L×W×H)215.9×76.2×58.4mm (probe head only)
Sampling AccessoriesTR-ACC-SPEC / TR-ACC-PRTIP / TR-ACC-MICRO / TR-ACC-VIALKIT / TR-WP

Technical Data

TR-PROBE THz-Raman™ 探头 规格参数表

项目TR-PROBECleanLineSpectrograph
激发波长单波长 532 / 785 / 830nm;双波长 830+638nm
样品口功率75mW(532 单模)
50mW(830 单模)
300mW(多模)
100mW(638nm 多模)+300mW(830nm 多模,双波长)
光谱范围(785nm)740~1040nm-770~+3120cm⁻¹
光谱范围(830nm)-1460~+2430cm⁻¹
杂散光(单色输入)<0.03%(距峰值 ±40nm)
重量1.6kg3.5kg6.9kg
外形尺寸(L×W×H)215.9×76.2×58.4mm229×199×89mm266×155×162mm

应用实例:卡马西平晶型 1 与晶型 3 拉曼光谱(785nm 激发),低波数区晶型差异清晰可辨

Outline Drawing(外形尺寸,单位 mm;BEAM HEIGHT 30mm,45° 接口,M4×0.7 安装螺纹)