ST-VUV25 SiC VUV Photodiode
Model：ST-VUV25
Overview
The ST-VUV25 is a SiC-based vacuum ultraviolet (VUV) photodiode designed for 193 nm ArF excimer laser monitoring and VUV radiation flux measurement. Photovoltaic-mode operation, visible-blind with low dark current, excellent stability under high-fluence VUV exposure; TO-8 metal housing with sapphire window.Description
Overview
The ST-VUV25 is a SiC-based vacuum ultraviolet (VUV) photodiode manufactured by GaNo Optoelectronics Inc. (Suzhou, China). Thanks to the wide bandgap of SiC, the device is visible-blind with very low dark current in photovoltaic mode, and offers excellent stability under high-fluence 193 nm VUV exposure.
Key Features
- SiC-based VUV photodiode
- Excellent stability under high fluence VUV exposure
- Photovoltaic mode operation, visible blind, low dark current
- High detection efficiency for 193 nm VUV radiation
- TO-8 metal housing with sapphire window
Applications
- VUV radiation flux measurement
- 193 nm ArF excimer laser monitoring
- Irradiance calibration in DUV lifetime testing systems
Specifications
| Chip size | 25 mm2 |
| Responsivity (@193 nm) | 50 mA/W |
| Dark current (Vr=-5V) | < 10 pA |
| Capacitance (0V, 1MHz) | 960 pF |
| Rise time (0V, RL=50 ohm) | < 2 us |
| Operation temperature | -20 ~ 80 C |
| Storage temperature | -55 ~ 90 C |
| Max reverse voltage | -20 V |
| Soldering temp (3 s) | 260 C |
| Package | TO-8 metal housing, sapphire window |
Technical Data
ST-VUV25 Specifications